IXFN70N120SK Pagpepresyo (USD) [911pcs Stock]
- 1 pcs$50.99035
- Bilang ng Bahagi:
- IXFN70N120SK
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Mga Transistor - JFET, Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFN70N120SK electronic components. IXFN70N120SK can be shipped within 24 hours after order. If you have any demands for IXFN70N120SK, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN70N120SK Mga katangian ng produkto
Bilang ng Bahagi :
IXFN70N120SK
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiC (Silicon Carbide Junction Transistor)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
68A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
34 mOhm @ 50A, 20V
Vgs (th) (Max) @ Id :
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs :
161nC @ 20V
Vgs (Max) :
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds :
2790pF @ 1000V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 175°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SOT-227B
Pakete / Kaso :
SOT-227-4, miniBLOC
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