STGB19NC60KDT4 Pagpepresyo (USD) [34612pcs Stock]
- 1 pcs$1.19666
- 1,000 pcs$1.19071
- Bilang ng Bahagi:
- STGB19NC60KDT4
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- IGBT 600V 35A 125W D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STGB19NC60KDT4 electronic components. STGB19NC60KDT4 can be shipped within 24 hours after order. If you have any demands for STGB19NC60KDT4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGB19NC60KDT4 Mga katangian ng produkto
Bilang ng Bahagi :
STGB19NC60KDT4
Tagagawa :
STMicroelectronics
Paglalarawan :
IGBT 600V 35A 125W D2PAK
Serye :
PowerMESH™
Katayuan ng Bahagi :
Active
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
600V
Kasalukuyang - Kolektor (Ic) (Max) :
35A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
75A
Vce (on) (Max) @ Vge, Ic :
2.75V @ 15V, 12A
Kapangyarihan - Max :
125W
Paglipat ng Enerhiya :
165µJ (on), 255µJ (off)
Uri ng input :
Standard
Gate Charge :
55nC
Td (on / off) @ 25 ° C :
30ns/105ns
Kondisyon ng Pagsubok :
480V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
31ns
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
D2PAK
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