HGTP5N120BND Pagpepresyo (USD) [56538pcs Stock]
- 1 pcs$0.69158
- 800 pcs$0.67146
- Bilang ng Bahagi:
- HGTP5N120BND
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- IGBT 1200V 21A 167W TO220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor HGTP5N120BND electronic components. HGTP5N120BND can be shipped within 24 hours after order. If you have any demands for HGTP5N120BND, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTP5N120BND Mga katangian ng produkto
Bilang ng Bahagi :
HGTP5N120BND
Tagagawa :
ON Semiconductor
Paglalarawan :
IGBT 1200V 21A 167W TO220AB
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
NPT
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
21A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
40A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 5A
Kapangyarihan - Max :
167W
Paglipat ng Enerhiya :
450µJ (on), 390µJ (off)
Uri ng input :
Standard
Gate Charge :
53nC
Td (on / off) @ 25 ° C :
22ns/160ns
Kondisyon ng Pagsubok :
960V, 5A, 25 Ohm, 15V
Reverse Recovery Time (trr) :
65ns
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-3
Package ng Tagabigay ng Device :
TO-220-3
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