IXTT10N100D2 Pagpepresyo (USD) [8899pcs Stock]
- 1 pcs$5.11938
- 30 pcs$5.09391
- Bilang ng Bahagi:
- IXTT10N100D2
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 10A TO-267.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Single, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTT10N100D2 electronic components. IXTT10N100D2 can be shipped within 24 hours after order. If you have any demands for IXTT10N100D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTT10N100D2 Mga katangian ng produkto
Bilang ng Bahagi :
IXTT10N100D2
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 10A TO-267
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5320pF @ 25V
Tampok ng FET :
Depletion Mode
Power Dissipation (Max) :
695W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-268
Pakete / Kaso :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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