DMN2011UFX-7 Pagpepresyo (USD) [249522pcs Stock]
- 1 pcs$0.14823
- 3,000 pcs$0.13172
- Bilang ng Bahagi:
- DMN2011UFX-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 12.2A DFN2050-4.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Transistor - Programmable Unijunction, Diode - RF, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN2011UFX-7 electronic components. DMN2011UFX-7 can be shipped within 24 hours after order. If you have any demands for DMN2011UFX-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2011UFX-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN2011UFX-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 20V 12.2A DFN2050-4
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12.2A (Ta)
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 10A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2248pF @ 10V
Kapangyarihan - Max :
2.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
4-VFDFN Exposed Pad
Package ng Tagabigay ng Device :
V-DFN2050-4
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