R6002END3TL1 Pagpepresyo (USD) [242031pcs Stock]
- 1 pcs$0.15282
- Bilang ng Bahagi:
- R6002END3TL1
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- NCH 600V 2A POWER MOSFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Arrays, Diode - Zener - Arrays, Thyristors - Mga SCR, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - JFET and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor R6002END3TL1 electronic components. R6002END3TL1 can be shipped within 24 hours after order. If you have any demands for R6002END3TL1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6002END3TL1 Mga katangian ng produkto
Bilang ng Bahagi :
R6002END3TL1
Tagagawa :
Rohm Semiconductor
Paglalarawan :
NCH 600V 2A POWER MOSFET
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.7A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
6.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
65pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
26W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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