CSD19537Q3 Pagpepresyo (USD) [185043pcs Stock]
- 1 pcs$0.20089
- 2,500 pcs$0.19989
- Bilang ng Bahagi:
- CSD19537Q3
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 50A 8VSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Mga Transistor - FET, MOSFET - RF and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD19537Q3 electronic components. CSD19537Q3 can be shipped within 24 hours after order. If you have any demands for CSD19537Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19537Q3 Mga katangian ng produkto
Bilang ng Bahagi :
CSD19537Q3
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET N-CH 100V 50A 8VSON
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
50A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
14.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1680pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
2.8W (Ta), 83W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-VSON (3.3x3.3)
Pakete / Kaso :
8-PowerVDFN
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