IRFI830G Pagpepresyo (USD) [26870pcs Stock]
- 1 pcs$1.54148
- 1,000 pcs$1.53381
- Bilang ng Bahagi:
- IRFI830G
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 500V 3.1A TO220FP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - IGBTs - Mga Module, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga SCR and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRFI830G electronic components. IRFI830G can be shipped within 24 hours after order. If you have any demands for IRFI830G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI830G Mga katangian ng produkto
Bilang ng Bahagi :
IRFI830G
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 500V 3.1A TO220FP
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.1A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
610pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
35W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-3
Pakete / Kaso :
TO-220-3 Full Pack, Isolated Tab
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