[13636pcs Stock]
- Bilang ng Bahagi:
- IRC630PBF
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 9A TO-220-5.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Diode - Zener - Arrays, Thyristors - Mga TRIAC, Thyristors - Mga SCR, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRC630PBF electronic components. IRC630PBF can be shipped within 24 hours after order. If you have any demands for IRC630PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRC630PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRC630PBF
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 200V 9A TO-220-5
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 25V
Tampok ng FET :
Current Sensing
Power Dissipation (Max) :
74W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-5
Pakete / Kaso :
TO-220-5
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