RQ3E100BNTB Pagpepresyo (USD) [871993pcs Stock]
- 1 pcs$0.04689
- 3,000 pcs$0.04666
- Bilang ng Bahagi:
- RQ3E100BNTB
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 10A HSMT8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga SCR, Mga Transistor - JFET, Diode - Zener - Single, Transistor - IGBTs - Mga Module and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor RQ3E100BNTB electronic components. RQ3E100BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E100BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E100BNTB Mga katangian ng produkto
Bilang ng Bahagi :
RQ3E100BNTB
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET N-CH 30V 10A HSMT8
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-HSMT (3.2x3)
Pakete / Kaso :
8-PowerVDFN
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