AUIRF7343QTR Pagpepresyo (USD) [111089pcs Stock]
- 1 pcs$0.33295
- 4,000 pcs$0.30541
- Bilang ng Bahagi:
- AUIRF7343QTR
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 55V 4.7/3.4A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Transistor - Programmable Unijunction and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies AUIRF7343QTR electronic components. AUIRF7343QTR can be shipped within 24 hours after order. If you have any demands for AUIRF7343QTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRF7343QTR Mga katangian ng produkto
Bilang ng Bahagi :
AUIRF7343QTR
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.7A, 3.4A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 4.7A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 25V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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