IRF8707GTRPBF Pagpepresyo (USD) [438676pcs Stock]
- 1 pcs$0.08432
- 4,000 pcs$0.08092
- Bilang ng Bahagi:
- IRF8707GTRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 11A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Single, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Arrays and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF8707GTRPBF electronic components. IRF8707GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF8707GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8707GTRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF8707GTRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 11A 8-SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.9 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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