IXFE23N100 Pagpepresyo (USD) [2783pcs Stock]
- 1 pcs$16.34522
- Bilang ng Bahagi:
- IXFE23N100
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 21A ISOPLUS227.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Diode - Zener - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC, Mga module ng Power driver and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFE23N100 electronic components. IXFE23N100 can be shipped within 24 hours after order. If you have any demands for IXFE23N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFE23N100 Mga katangian ng produkto
Bilang ng Bahagi :
IXFE23N100
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 21A ISOPLUS227
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
21A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
430 mOhm @ 11.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
500W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SOT-227B
Pakete / Kaso :
SOT-227-4, miniBLOC
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