VS-GB100TH120N Pagpepresyo (USD) [261pcs Stock]
- 1 pcs$177.68022
- 12 pcs$163.71967
- Bilang ng Bahagi:
- VS-GB100TH120N
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- IGBT 1200V 200A 833W INT-A-PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single, Diode - RF, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Mga Transistor - JFET and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120N electronic components. VS-GB100TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB100TH120N Mga katangian ng produkto
Bilang ng Bahagi :
VS-GB100TH120N
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
IGBT 1200V 200A 833W INT-A-PAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
-
Pag-configure :
Half Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
200A
Kapangyarihan - Max :
833W
Vce (on) (Max) @ Vge, Ic :
2.35V @ 15V, 100A
Kasalukuyang - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
8.58nF @ 25V
Input :
Standard
NTC Thermistor :
No
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Double INT-A-PAK (3 + 4)
Package ng Tagabigay ng Device :
Double INT-A-PAK
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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