DF150R12RT4HOSA1 Pagpepresyo (USD) [1794pcs Stock]
- 1 pcs$24.13654
- Bilang ng Bahagi:
- DF150R12RT4HOSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT MODULE VCES 1200V 150A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Arrays, Thyristors - SCR - Mga Module and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies DF150R12RT4HOSA1 electronic components. DF150R12RT4HOSA1 can be shipped within 24 hours after order. If you have any demands for DF150R12RT4HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF150R12RT4HOSA1 Mga katangian ng produkto
Bilang ng Bahagi :
DF150R12RT4HOSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT MODULE VCES 1200V 150A
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Pag-configure :
Single Chopper
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
150A
Kapangyarihan - Max :
790W
Vce (on) (Max) @ Vge, Ic :
2.15V @ 15V, 150A
Kasalukuyang - Collector Cutoff (Max) :
1mA
Input Capacitance (Cies) @ Vce :
9.3nF @ 25V
Input :
Standard
NTC Thermistor :
No
Temperatura ng pagpapatakbo :
-40°C ~ 150°C
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
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