Infineon Technologies - FZ1200R12HE4PHPSA1

KEY Part #: K6533613

FZ1200R12HE4PHPSA1 Pagpepresyo (USD) [144pcs Stock]

  • 1 pcs$318.03066

Bilang ng Bahagi:
FZ1200R12HE4PHPSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MODULE IGBT IHMB130-2.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays, Thyristors - Mga SCR, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies FZ1200R12HE4PHPSA1 electronic components. FZ1200R12HE4PHPSA1 can be shipped within 24 hours after order. If you have any demands for FZ1200R12HE4PHPSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FZ1200R12HE4PHPSA1 Mga katangian ng produkto

Bilang ng Bahagi : FZ1200R12HE4PHPSA1
Tagagawa : Infineon Technologies
Paglalarawan : MODULE IGBT IHMB130-2
Serye : -
Katayuan ng Bahagi : Active
Uri ng IGBT : Trench Field Stop
Pag-configure : Single Switch
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 1200V
Kasalukuyang - Kolektor (Ic) (Max) : 1825A
Kapangyarihan - Max : -
Vce (on) (Max) @ Vge, Ic : 2.1V @ 15V, 1200A
Kasalukuyang - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 74nF @ 25V
Input : Standard
NTC Thermistor : No
Temperatura ng pagpapatakbo : -40°C ~ 150°C
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Module
Package ng Tagabigay ng Device : Module

Maaari ka ring Makisalamuha sa
  • VS-GT175DA120U

    Vishay Semiconductor Diodes Division

    IGBT 1200V 288A 1087W SOT-227.

  • VS-CPV363M4KPBF

    Vishay Semiconductor Diodes Division

    MOD IGBT 3PHASE INV 600V SIP.

  • VS-GT100NA120UX

    Vishay Semiconductor Diodes Division

    IGBT 1200V 134A 463W SOT-227.

  • VS-GT100LA120UX

    Vishay Semiconductor Diodes Division

    IGBT 1200V 134A 463W SOT-227.

  • VS-GT100DA60U

    Vishay Semiconductor Diodes Division

    IGBT 600V 184A 577W SOT-227.

  • VS-GT100DA120U

    Vishay Semiconductor Diodes Division

    IGBT 1200V 258A 893W SOT-227.