IXTF200N10T Pagpepresyo (USD) [13495pcs Stock]
- 1 pcs$3.37581
- 25 pcs$3.35902
- Bilang ng Bahagi:
- IXTF200N10T
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 90A I4-PAC-5.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - Mga SCR, Mga Transistor - JFET and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTF200N10T electronic components. IXTF200N10T can be shipped within 24 hours after order. If you have any demands for IXTF200N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTF200N10T Mga katangian ng produkto
Bilang ng Bahagi :
IXTF200N10T
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 100V 90A I4-PAC-5
Serye :
TrenchMV™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
90A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
156W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
ISOPLUS i4-PAC™
Pakete / Kaso :
i4-Pac™-5
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