SQD25N06-22L_GE3 Pagpepresyo (USD) [122682pcs Stock]
- 1 pcs$0.30149
- 2,000 pcs$0.27134
- Bilang ng Bahagi:
- SQD25N06-22L_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 25A TO252.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver, Diode - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Thyristors - Mga TRIAC, Transistor - Programmable Unijunction, Diode - Mga Rectifier ng Bridge and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQD25N06-22L_GE3 electronic components. SQD25N06-22L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD25N06-22L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD25N06-22L_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQD25N06-22L_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 60V 25A TO252
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
22 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1975pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
62W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252, (D-Pak)
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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