IRLR3636TRLPBF Pagpepresyo (USD) [120807pcs Stock]
- 1 pcs$0.30617
- 3,000 pcs$0.25477
- Bilang ng Bahagi:
- IRLR3636TRLPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 50A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Diode - Zener - Arrays, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Transistor - Programmable Unijunction and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRLR3636TRLPBF electronic components. IRLR3636TRLPBF can be shipped within 24 hours after order. If you have any demands for IRLR3636TRLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR3636TRLPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRLR3636TRLPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 60V 50A DPAK
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
50A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
3779pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
143W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D-Pak
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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