[2105pcs Stock]
- Bilang ng Bahagi:
- TK12Q60W,S1VQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 11.5A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Mga module ng Power driver, Mga Transistor - JFET and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK12Q60W,S1VQ electronic components. TK12Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK12Q60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12Q60W,S1VQ Mga katangian ng produkto
Bilang ng Bahagi :
TK12Q60W,S1VQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 600V 11.5A IPAK
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
340 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
100W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Stub Leads, IPak
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