TK6P60W,RVQ Pagpepresyo (USD) [113220pcs Stock]
- 1 pcs$0.34825
- 2,000 pcs$0.34652
- Bilang ng Bahagi:
- TK6P60W,RVQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 6.2A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Diode - Rectifiers - Arrays and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK6P60W,RVQ electronic components. TK6P60W,RVQ can be shipped within 24 hours after order. If you have any demands for TK6P60W,RVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6P60W,RVQ Mga katangian ng produkto
Bilang ng Bahagi :
TK6P60W,RVQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 600V 6.2A DPAK
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
820 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
390pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
60W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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