[3054pcs Stock]
- Bilang ng Bahagi:
- APT8075BN
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 13A TO247AD.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APT8075BN electronic components. APT8075BN can be shipped within 24 hours after order. If you have any demands for APT8075BN, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT8075BN Mga katangian ng produkto
Bilang ng Bahagi :
APT8075BN
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET N-CH 800V 13A TO247AD
Serye :
POWER MOS IV®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
13A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2950pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
310W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247AD
Pakete / Kaso :
TO-247-3
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