IXTU01N100 Pagpepresyo (USD) [50552pcs Stock]
- 1 pcs$0.89400
- 50 pcs$0.88955
- Bilang ng Bahagi:
- IXTU01N100
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1KV .1A I-PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Mga module ng Power driver, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTU01N100 electronic components. IXTU01N100 can be shipped within 24 hours after order. If you have any demands for IXTU01N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTU01N100 Mga katangian ng produkto
Bilang ng Bahagi :
IXTU01N100
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1KV .1A I-PAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
6.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
54pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
25W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-251
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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