IXYS - IXFH4N100Q

KEY Part #: K6416569

IXFH4N100Q Pagpepresyo (USD) [16176pcs Stock]

  • 1 pcs$2.94442
  • 30 pcs$2.92977

Bilang ng Bahagi:
IXFH4N100Q
Tagagawa:
IXYS
Detalyadong Paglalarawan:
MOSFET N-CH 1000V 4A TO-247AD.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Diode - Rectifiers - Single, Thyristors - Mga SCR, Mga Transistor - Bipolar (BJT) - RF, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCR - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in IXYS IXFH4N100Q electronic components. IXFH4N100Q can be shipped within 24 hours after order. If you have any demands for IXFH4N100Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH4N100Q Mga katangian ng produkto

Bilang ng Bahagi : IXFH4N100Q
Tagagawa : IXYS
Paglalarawan : MOSFET N-CH 1000V 4A TO-247AD
Serye : HiPerFET™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1050pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 150W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-247AD (IXFH)
Pakete / Kaso : TO-247-3

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