Bilang ng Bahagi :
TK31A60W,S4VX
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 600V 30.8A TO-220SIS
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
45W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220SIS
Pakete / Kaso :
TO-220-3 Full Pack