[13508pcs Stock]
- Bilang ng Bahagi:
- IRF6611TR1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 32A DIRECTFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF6611TR1 electronic components. IRF6611TR1 can be shipped within 24 hours after order. If you have any demands for IRF6611TR1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6611TR1 Mga katangian ng produkto
Bilang ng Bahagi :
IRF6611TR1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 32A DIRECTFET
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
32A (Ta), 150A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.6 mOhm @ 27A, 10V
Vgs (th) (Max) @ Id :
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4860pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
3.9W (Ta), 89W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DIRECTFET™ MX
Pakete / Kaso :
DirectFET™ Isometric MX
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