SI7962DP-T1-E3 Pagpepresyo (USD) [46382pcs Stock]
- 1 pcs$0.84300
- 3,000 pcs$0.78907
- Bilang ng Bahagi:
- SI7962DP-T1-E3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 40V 7.1A PPAK SO-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga module ng Power driver, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Transistor - Programmable Unijunction, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Single and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI7962DP-T1-E3 electronic components. SI7962DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7962DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7962DP-T1-E3 Mga katangian ng produkto
Bilang ng Bahagi :
SI7962DP-T1-E3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 40V 7.1A PPAK SO-8
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7.1A
Rds On (Max) @ Id, Vgs :
17 mOhm @ 11.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
1.4W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device :
PowerPAK® SO-8 Dual
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