PHKD3NQ10T,518 Pagpepresyo (USD) [4147pcs Stock]
- 10,000 pcs$0.23477
- Bilang ng Bahagi:
- PHKD3NQ10T,518
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 100V 3A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Mga module ng Power driver, Diode - RF, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - JFET, Thyristors - DIACs, SIDACs and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. PHKD3NQ10T,518 electronic components. PHKD3NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHKD3NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHKD3NQ10T,518 Mga katangian ng produkto
Bilang ng Bahagi :
PHKD3NQ10T,518
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
MOSFET 2N-CH 100V 3A 8SOIC
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3A
Rds On (Max) @ Id, Vgs :
90 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
633pF @ 20V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-65°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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