Vishay Semiconductor Diodes Division - EGP50DHE3/73

KEY Part #: K6448128

[1188pcs Stock]


    Bilang ng Bahagi:
    EGP50DHE3/73
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE GEN PURP 200V 5A GP20.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays and Transistor - Espesyal na Pakay ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division EGP50DHE3/73 electronic components. EGP50DHE3/73 can be shipped within 24 hours after order. If you have any demands for EGP50DHE3/73, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EGP50DHE3/73 Mga katangian ng produkto

    Bilang ng Bahagi : EGP50DHE3/73
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE GEN PURP 200V 5A GP20
    Serye : SUPERECTIFIER®
    Katayuan ng Bahagi : Obsolete
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 200V
    Kasalukuyang - Average na Rectified (Io) : 5A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 950mV @ 5A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 50ns
    Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 200V
    Capacitance @ Vr, F : 95pF @ 4V, 1MHz
    Uri ng Pag-mount : Through Hole
    Pakete / Kaso : DO-201AA, DO-27, Axial
    Package ng Tagabigay ng Device : GP20
    Operating temperatura - Junction : -65°C ~ 150°C

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