Microsemi Corporation - JAN1N6622US

KEY Part #: K6442405

[7413pcs Stock]


    Bilang ng Bahagi:
    JAN1N6622US
    Tagagawa:
    Microsemi Corporation
    Detalyadong Paglalarawan:
    DIODE GEN PURP 660V 2A D5A. Rectifiers Rectifier
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Espesyal na Pakay, Thyristors - Mga TRIAC, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - JFET, Thyristors - SCR - Mga Module and Transistor - Bipolar (BJT) - Single ...
    Kumpetensyang Pakinabang:
    We specialize in Microsemi Corporation JAN1N6622US electronic components. JAN1N6622US can be shipped within 24 hours after order. If you have any demands for JAN1N6622US, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    JAN1N6622US Mga katangian ng produkto

    Bilang ng Bahagi : JAN1N6622US
    Tagagawa : Microsemi Corporation
    Paglalarawan : DIODE GEN PURP 660V 2A D5A
    Serye : Military, MIL-PRF-19500/585
    Katayuan ng Bahagi : Active
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 660V
    Kasalukuyang - Average na Rectified (Io) : 1.2A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.4V @ 1.2A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 30ns
    Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 660V
    Capacitance @ Vr, F : 10pF @ 10V, 1MHz
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : SQ-MELF, A
    Package ng Tagabigay ng Device : D-5A
    Operating temperatura - Junction : -65°C ~ 150°C

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