Vishay Semiconductor Diodes Division - GPP60GHE3/73

KEY Part #: K6448038

GPP60GHE3/73 Pagpepresyo (USD) [1219pcs Stock]

  • 1,200 pcs$0.22425

Bilang ng Bahagi:
GPP60GHE3/73
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 400V 6A P600.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Diode - Mga Rectifier ng Bridge, Diode - Zener - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division GPP60GHE3/73 electronic components. GPP60GHE3/73 can be shipped within 24 hours after order. If you have any demands for GPP60GHE3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GPP60GHE3/73 Mga katangian ng produkto

Bilang ng Bahagi : GPP60GHE3/73
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 400V 6A P600
Serye : -
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 400V
Kasalukuyang - Average na Rectified (Io) : 6A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 6A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 5.5µs
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 400V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : P600, Axial
Package ng Tagabigay ng Device : P600
Operating temperatura - Junction : -55°C ~ 175°C

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