SIZ200DT-T1-GE3 Pagpepresyo (USD) [192003pcs Stock]
- 1 pcs$0.19264
- Bilang ng Bahagi:
- SIZ200DT-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH DUAL 30V.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIZ200DT-T1-GE3 electronic components. SIZ200DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ200DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ200DT-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIZ200DT-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH DUAL 30V
Serye :
TrenchFET® Gen IV
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1510pF @ 15V, 1600pF @ 15V
Kapangyarihan - Max :
4.3W (Ta), 33W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerWDFN
Package ng Tagabigay ng Device :
8-PowerPair® (3.3x3.3)
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