Toshiba Semiconductor and Storage - TK25E06K3,S1X(S

KEY Part #: K6419266

TK25E06K3,S1X(S Pagpepresyo (USD) [100602pcs Stock]

  • 1 pcs$0.42969
  • 50 pcs$0.42755

Bilang ng Bahagi:
TK25E06K3,S1X(S
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET N-CH 60V 25A TO-220AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
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Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage TK25E06K3,S1X(S electronic components. TK25E06K3,S1X(S can be shipped within 24 hours after order. If you have any demands for TK25E06K3,S1X(S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK25E06K3,S1X(S Mga katangian ng produkto

Bilang ng Bahagi : TK25E06K3,S1X(S
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET N-CH 60V 25A TO-220AB
Serye : U-MOSIV
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 25A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 18 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
Tampok ng FET : -
Power Dissipation (Max) : 60W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220-3
Pakete / Kaso : TO-220-3