SIHU2N80E-GE3 Pagpepresyo (USD) [53440pcs Stock]
- 1 pcs$0.73167
- Bilang ng Bahagi:
- SIHU2N80E-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 2.8A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Single, Diode - Zener - Arrays, Thyristors - SCR - Mga Module, Transistor - IGBTs - Arrays, Diode - Mga Rectifier ng Bridge, Diode - RF and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIHU2N80E-GE3 electronic components. SIHU2N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU2N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU2N80E-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIHU2N80E-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 800V 2.8A IPAK
Serye :
E
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.8A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.75 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19.6nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
315pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
62.5W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
IPAK (TO-251)
Pakete / Kaso :
TO-251-3 Long Leads, IPak, TO-251AB
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