Bilang ng Bahagi :
APTM100H46FT3G
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 4N-CH 1000V 19A SP3
Katayuan ng Bahagi :
Active
Uri ng FET :
4 N-Channel (H-Bridge)
Drain sa Source Voltage (Vdss) :
1000V (1kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
19A
Rds On (Max) @ Id, Vgs :
552 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Kapangyarihan - Max :
357W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SP3