Vishay Siliconix - SI4103DY-T1-GE3

KEY Part #: K6403488

SI4103DY-T1-GE3 Pagpepresyo (USD) [281791pcs Stock]

  • 1 pcs$0.13126

Bilang ng Bahagi:
SI4103DY-T1-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET P-CHAN 30V SO-8.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF and Diode - Rectifiers - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SI4103DY-T1-GE3 electronic components. SI4103DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4103DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4103DY-T1-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SI4103DY-T1-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET P-CHAN 30V SO-8
Serye : TrenchFET® Gen III
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 14A (Ta), 16A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 140nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5200pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 2.5W (Ta), 5.2W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-SO
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

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