Nexperia USA Inc. - BUK7C10-75AITE,118

KEY Part #: K6415293

BUK7C10-75AITE,118 Pagpepresyo (USD) [12460pcs Stock]

  • 800 pcs$0.72940

Bilang ng Bahagi:
BUK7C10-75AITE,118
Tagagawa:
Nexperia USA Inc.
Detalyadong Paglalarawan:
MOSFET N-CH 75V 75A D2PAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - FET, MOSFET - RF, Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays and Diode - Zener - Single ...
Kumpetensyang Pakinabang:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUK7C10-75AITE,118 Mga katangian ng produkto

Bilang ng Bahagi : BUK7C10-75AITE,118
Tagagawa : Nexperia USA Inc.
Paglalarawan : MOSFET N-CH 75V 75A D2PAK
Serye : Automotive, AEC-Q101, TrenchMOS™
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 75V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 75A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 121nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4700pF @ 25V
Tampok ng FET : Current Sensing
Power Dissipation (Max) : 272W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D2PAK
Pakete / Kaso : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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