[13434pcs Stock]
- Bilang ng Bahagi:
- NVB5860NT4G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 169A D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Transistors - IGBTs - Single and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NVB5860NT4G electronic components. NVB5860NT4G can be shipped within 24 hours after order. If you have any demands for NVB5860NT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVB5860NT4G Mga katangian ng produkto
Bilang ng Bahagi :
NVB5860NT4G
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 60V 169A D2PAK
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
220A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10760pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
283W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D2PAK-3
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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