SI4900DY-T1-GE3 Pagpepresyo (USD) [168688pcs Stock]
- 1 pcs$0.22036
- 2,500 pcs$0.21927
- Bilang ng Bahagi:
- SI4900DY-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 5.3A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistors - IGBTs - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI4900DY-T1-GE3 electronic components. SI4900DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4900DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4900DY-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI4900DY-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 60V 5.3A 8-SOIC
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.3A
Rds On (Max) @ Id, Vgs :
58 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
665pF @ 15V
Kapangyarihan - Max :
3.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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