IPU80R1K4CEAKMA1 Pagpepresyo (USD) [2956pcs Stock]
- 1,500 pcs$0.17293
- Bilang ng Bahagi:
- IPU80R1K4CEAKMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V TO251-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - JFET, Diode - RF, Transistor - IGBTs - Mga Module, Diode - Zener - Arrays and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPU80R1K4CEAKMA1 electronic components. IPU80R1K4CEAKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R1K4CEAKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU80R1K4CEAKMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPU80R1K4CEAKMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 800V TO251-3
Serye :
CoolMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 2.3A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
63W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO251-3
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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