IPT65R105G7XTMA1 Pagpepresyo (USD) [28993pcs Stock]
- 1 pcs$1.49136
- 2,000 pcs$1.48394
- Bilang ng Bahagi:
- IPT65R105G7XTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPT65R105G7XTMA1 electronic components. IPT65R105G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPT65R105G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT65R105G7XTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPT65R105G7XTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
HIGH POWERNEW
Serye :
CoolMOS™ C7
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
24A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
105 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
156W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-HSOF-8-2
Pakete / Kaso :
8-PowerSFN
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