[12929pcs Stock]
- Bilang ng Bahagi:
- IRF6601
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 26A DIRECTFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Mga module ng Power driver, Transistor - IGBTs - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF6601 electronic components. IRF6601 can be shipped within 24 hours after order. If you have any demands for IRF6601, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6601 Mga katangian ng produkto
Bilang ng Bahagi :
IRF6601
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 20V 26A DIRECTFET
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
26A (Ta), 85A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3440pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
3.6W (Ta), 42W (Tc)
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DIRECTFET™ MT
Pakete / Kaso :
DirectFET™ Isometric MT
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