IGT60R190D1SATMA1 Pagpepresyo (USD) [10659pcs Stock]
- 1 pcs$3.86600
- Bilang ng Bahagi:
- IGT60R190D1SATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IC GAN FET 600V 23A 8HSOF.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga SCR and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IGT60R190D1SATMA1 electronic components. IGT60R190D1SATMA1 can be shipped within 24 hours after order. If you have any demands for IGT60R190D1SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGT60R190D1SATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IGT60R190D1SATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IC GAN FET 600V 23A 8HSOF
Serye :
CoolGaN™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-10V
Input Capacitance (Ciss) (Max) @ Vds :
157pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
55.5W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-HSOF-8-3
Pakete / Kaso :
8-PowerSFN
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