[12484pcs Stock]
- Bilang ng Bahagi:
- BSH112,235
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 300MA SOT-23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. BSH112,235 electronic components. BSH112,235 can be shipped within 24 hours after order. If you have any demands for BSH112,235, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSH112,235 Mga katangian ng produkto
Bilang ng Bahagi :
BSH112,235
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 60V 300MA SOT-23
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
300mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
40pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
830mW (Tc)
Temperatura ng pagpapatakbo :
-65°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-236AB (SOT23)
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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