GeneSiC Semiconductor - GA10JT12-263

KEY Part #: K6399113

GA10JT12-263 Pagpepresyo (USD) [4640pcs Stock]

  • 1 pcs$10.16943
  • 10 pcs$9.24469
  • 25 pcs$8.55122
  • 100 pcs$7.47449
  • 250 pcs$6.81498

Bilang ng Bahagi:
GA10JT12-263
Tagagawa:
GeneSiC Semiconductor
Detalyadong Paglalarawan:
TRANS SJT 1200V 25A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC, Diode - RF, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in GeneSiC Semiconductor GA10JT12-263 electronic components. GA10JT12-263 can be shipped within 24 hours after order. If you have any demands for GA10JT12-263, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA10JT12-263 Mga katangian ng produkto

Bilang ng Bahagi : GA10JT12-263
Tagagawa : GeneSiC Semiconductor
Paglalarawan : TRANS SJT 1200V 25A
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : -
Teknolohiya : SiC (Silicon Carbide Junction Transistor)
Drain sa Source Voltage (Vdss) : 1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 120 mOhm @ 10A
Vgs (th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1403pF @ 800V
Tampok ng FET : -
Power Dissipation (Max) : 170W (Tc)
Temperatura ng pagpapatakbo : 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : -
Pakete / Kaso : -
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