ON Semiconductor - NVMFS6H818NWFT1G

KEY Part #: K6400637

NVMFS6H818NWFT1G Pagpepresyo (USD) [64094pcs Stock]

  • 1 pcs$0.61005

Bilang ng Bahagi:
NVMFS6H818NWFT1G
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
TRENCH 8 80V NFET.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Thyristors - SCR - Mga Module, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistor - Programmable Unijunction and Transistors - IGBTs - Single ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor NVMFS6H818NWFT1G electronic components. NVMFS6H818NWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS6H818NWFT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS6H818NWFT1G Mga katangian ng produkto

Bilang ng Bahagi : NVMFS6H818NWFT1G
Tagagawa : ON Semiconductor
Paglalarawan : TRENCH 8 80V NFET
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 80V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 20A (Ta), 123A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3100pF @ 40V
Tampok ng FET : -
Power Dissipation (Max) : 3.8W (Ta), 136W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 5-DFN (5x6) (8-SOFL)
Pakete / Kaso : 8-PowerTDFN, 5 Leads

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