CSD13306WT Pagpepresyo (USD) [259492pcs Stock]
- 1 pcs$0.14254
- 250 pcs$0.12102
- 1,250 pcs$0.07530
- Bilang ng Bahagi:
- CSD13306WT
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET N-CH 12V 6DSBGA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Thyristors - Mga TRIAC, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD13306WT electronic components. CSD13306WT can be shipped within 24 hours after order. If you have any demands for CSD13306WT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13306WT Mga katangian ng produkto
Bilang ng Bahagi :
CSD13306WT
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET N-CH 12V 6DSBGA
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
10.2 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11.2nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
1370pF @ 6V
Tampok ng FET :
-
Power Dissipation (Max) :
1.9W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-DSBGA (1x1.5)
Pakete / Kaso :
6-UFBGA, DSBGA
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