IRF5801TRPBF Pagpepresyo (USD) [459090pcs Stock]
- 1 pcs$0.08057
- 3,000 pcs$0.06959
- Bilang ng Bahagi:
- IRF5801TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 600MA 6-TSOP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single, Diode - Mga Rectifier ng Bridge, Mga Transistor - JFET and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF5801TRPBF electronic components. IRF5801TRPBF can be shipped within 24 hours after order. If you have any demands for IRF5801TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5801TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF5801TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 600MA 6-TSOP
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
600mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 360mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.9nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
88pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Micro6™(TSOP-6)
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
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