DMN61D8LVTQ-7 Pagpepresyo (USD) [458797pcs Stock]
- 1 pcs$0.08062
- 3,000 pcs$0.07216
- Bilang ng Bahagi:
- DMN61D8LVTQ-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 0.63A TSOT26.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Diode - RF, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN61D8LVTQ-7 electronic components. DMN61D8LVTQ-7 can be shipped within 24 hours after order. If you have any demands for DMN61D8LVTQ-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D8LVTQ-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN61D8LVTQ-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 60V 0.63A TSOT26
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
630mA
Rds On (Max) @ Id, Vgs :
1.8 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
12.9pF @ 12V
Kapangyarihan - Max :
820mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
Package ng Tagabigay ng Device :
TSOT-26
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