CSD85312Q3E Pagpepresyo (USD) [244691pcs Stock]
- 1 pcs$0.15525
- 2,500 pcs$0.15448
- Bilang ng Bahagi:
- CSD85312Q3E
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 39A 8VSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Thyristors - SCR - Mga Module, Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Programmable Unijunction and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD85312Q3E electronic components. CSD85312Q3E can be shipped within 24 hours after order. If you have any demands for CSD85312Q3E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD85312Q3E Mga katangian ng produkto
Bilang ng Bahagi :
CSD85312Q3E
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET 2N-CH 20V 39A 8VSON
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Common Source
Tampok ng FET :
Logic Level Gate, 5V Drive
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
39A
Rds On (Max) @ Id, Vgs :
12.4 mOhm @ 10A, 8V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
2390pF @ 10V
Kapangyarihan - Max :
2.5W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
8-VSON (3.3x3.3)
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